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发明名称
Fabrication method of MOS transistor
摘要
申请公布号
KR100613373(B1)
申请公布日期
2006.08.17
申请号
KR20040061136
申请日期
2004.08.03
申请人
发明人
分类号
H01L21/336;H01L21/31
主分类号
H01L21/336
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代理人
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地址
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