| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device having a resistance element of high reliability by controlling easily, accurately, and stably not only a connection resistance composition but a resistance value of a resistance element body without increasing the number of processes concerning the resistance value of the resistance element. SOLUTION: A silicon oxide film 49 is accumulated as an insulating film by e. g. a thermal CVD method so as to cover the whole surface of a silicon substrate 1 containing a surface of a resistance element 81 just after a resist pattern 54 is removed. The silicon oxide film 49 is processed, so that a silicide blocks 50 are formed on the resistance element 81 and a side wall spacer 61 are formed on both side walls of each of transistor gate electrodes 42, etc. simultaneously. COPYRIGHT: (C)2006,JPO&NCIPI
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