| 摘要 |
PROBLEM TO BE SOLVED: To provide a drain extension transistor device having a multiplex capacitor, and its manufacturing method. SOLUTION: A first capacitor structure has a first dielectric layer (14), a first gate layer (16) and first and second lateral sides, and is overlaid on a first conductive type of channel area in a semiconductor substrate (4). A second capacitor structure comprises a second dielectric layer (26) and a second gate layer (28), and is formed so as to be overlaid on the first gate structure. A second conductive type of second source area (22) is formed on the semiconductor substrate under a partial gate structure in proximity to the first lateral side of a gate and the second conductive type of light doping drain extension area/well (12). The second conductive type of drain extension area is formed in the drain extension area (12). The first and second capacitor structures are series-connected to enable a gate operation of a high voltage to be made. COPYRIGHT: (C)2006,JPO&NCIPI
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