发明名称 |
Single ended three transistor quasi-static ram cell |
摘要 |
A single ended three transistor quasi-static RAM cell comprises two cross coupled MOS transistors and one select MOS transistor connected to drain of one of the aforementioned MOS transistors wherein drains of both cross coupled MOS transistors are each connected to anode of one of two PN diodes functioning as constant current loads when exposed to continuous light from LED diode.
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申请公布号 |
US2006176083(A1) |
申请公布日期 |
2006.08.10 |
申请号 |
US20050549780 |
申请日期 |
2005.09.19 |
申请人 |
KRILIC GORAN |
发明人 |
KRILIC GORAN |
分类号 |
G01R19/00;G11C11/402;G11C11/405;G11C11/406;G11C11/412;H01L21/8244;H01L27/11 |
主分类号 |
G01R19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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