发明名称 Single ended three transistor quasi-static ram cell
摘要 A single ended three transistor quasi-static RAM cell comprises two cross coupled MOS transistors and one select MOS transistor connected to drain of one of the aforementioned MOS transistors wherein drains of both cross coupled MOS transistors are each connected to anode of one of two PN diodes functioning as constant current loads when exposed to continuous light from LED diode.
申请公布号 US2006176083(A1) 申请公布日期 2006.08.10
申请号 US20050549780 申请日期 2005.09.19
申请人 KRILIC GORAN 发明人 KRILIC GORAN
分类号 G01R19/00;G11C11/402;G11C11/405;G11C11/406;G11C11/412;H01L21/8244;H01L27/11 主分类号 G01R19/00
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