| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor capable of reducing noise and dark signal, and of increasing the amount of charge as a sensor. SOLUTION: A CMOS image sensor having capacitors 320, 330 in which capacitance is increased is provided. The capacitors 320, 330 with increased capacitance enable the generation of a large current at a photodiode 340. The image sensor also employs a transistor 310 having a nitride spacer 318 formed on a buffer oxide layer 316. Additional capacitors 320, 330 may be provided by a stack capacitor, a planar capacitor, a trench capacitor, an MOS capacitor, an MIM/PIP capacitor, or various equivalent capacitor structures. It can also be applied to the form of a 4-transistor pixel or a 3-transistor pixel. COPYRIGHT: (C)2006,JPO&NCIPI
|
