| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an unevenness forming method of a silicon substrate which is simple and quick and has mass-productivity, and can be applied to forming of a silicon substrate for a solar cell. <P>SOLUTION: In this method, a resist material is pattern-depicted on the surface of the silicon substrate by ink jetting for etching the material, thereby forming unevenness on the surface of the silicon substrate. In this method, resist patterns are made different at a portion 103 that is to serve as an electrode, and a portion 104 other than the electrode portion. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
