SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING SAME

摘要

To remove an oxide film on a surface of various metal conductive layer materials to be used for wiring and the like in a semiconductor device without damaging peripheral structures, a metal conductive region (12) is placed in a reduction process chamber (22), an inert gas with at least oxygen partial pressure controlled at 1×10<SUP>-13</SUP> or below is introduced into the reduction process chamber (22) by an oxygen pump (30), and the metal conductive region (12) is heated by a heating means (25). Thus, reduction process is performed to the oxide film formed on the surface of the metal conductive region (12).