| 摘要 |
PROBLEM TO BE SOLVED: To form an SOI transistor in lower cost while reducing distribution in the thickness of a semiconductor layer. SOLUTION: A supporting material 7 is provided to a side wall of a groove 6 formed on a semiconductor substrate 1, a groove 8 is formed to expose a second semiconductor layer 3. A cavity 9 is formed between the semiconductor substrate 1 and the second semiconductor layer 3 by placing in contact an etching gas or an etching liquid to the first semiconductor layer 2 via the groove 8. An oxide film 10 is formed to the cavity 9 between the semiconductor substrate 1 and the second semiconductor layer 3 through hot oxidation of the second semiconductor layer 3 and the supporting material 7. Moreover, an oxide film 11 is formed to the side wall of the semiconductor substrate 1 within the groove 8 and a gate electrode 22 arranged along the direction crossing in orthogonal to the groove 6 is formed on the second semiconductor layer 3. COPYRIGHT: (C)2006,JPO&NCIPI
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