3-DIMENSIONAL FLASH MEMORY DEVICE AND FABRICATION METHOD THEREOF
摘要
<p>In an embodiment, a 3-dimensional flash memory device includes: a gate extending in a vertical direction on a semiconductor substrate; a charge storing layer surrounding the gate; a silicon layer surrounding the charge storing layer; a channel region vertically formed in the silicon layer; and source/drain regions vertically formed on both sides of the channel region in the silicon layer. Integration can be improved by storing data in a 3-dimensional manner; a 2-bit operation can be performed by providing transistors on both sides of the gate.</p>
申请公布号
KR20060089547(A)
申请公布日期
2006.08.09
申请号
KR20050011008
申请日期
2005.02.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, SUNG MIN;YUN, EUN JUNG;KIM, DONG WON;YOON, JAE MAN