发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<p>According to this invention, the NAND type flash memory of high reliability is realized. It provides a semiconductor memory device comprising: a plurality of memory cells; a plurality of word lines formed by a first gate wiring layer; a plurality of first transistors for providing voltages to said word lines; and electrical connections for connection said word lines and sources or drains of said first transistors, said electrical connections being formed of both first wirings of a first wiring layer formed above said first gate wiring layer and second wirings of a second wiring layers formed above said first wiring layer.</p> |
申请公布号 |
KR20060089154(A) |
申请公布日期 |
2006.08.08 |
申请号 |
KR20060010140 |
申请日期 |
2006.02.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUTATSUYAMA TAKUYA;KOTANI TOSHIYA;MASHITA HIROMITSU;MAESONO ATSUSHI;NAKANO AYAKO;FUJISAWA TADAHITO |
分类号 |
H01L27/115;H01L21/8247;H01L27/04 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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