| 发明名称 |
Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands |
| 摘要 |
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
|
| 申请公布号 |
US7087481(B2) |
申请公布日期 |
2006.08.08 |
| 申请号 |
US20020229841 |
申请日期 |
2002.08.28 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
VAARTSTRA BRIAN A.;QUICK TIMOTHY A. |
| 分类号 |
H01L21/00;C23C16/40;C23C16/44;C23C16/455;H01L21/02;H01L21/316 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
