发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor array panel which realizes a lower cost and a further shortening of process time by further reducing the number of necessary masks and the number of processes. SOLUTION: The method of manufacturing a thin film transistor array panel includes: forming thin film transistors each having a gate line, a data line and a drain electrode; forming an insulating layer on the thin film transistors; forming a first conductive layer electrically connected to the drain electrode on the insulating layer; forming a second conductive layer on the first conductive layer; forming a photoresist layer including two parts of different thickness on the second conductive layer; etching the second conductive layer with a first etchant by using the photoresist layer as a mask; and etching the first conductive layer with a second etchant by using the photoresist layer and the second conductive layer as a mask. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006201793(A) |
申请公布日期 |
2006.08.03 |
申请号 |
JP20060013138 |
申请日期 |
2006.01.20 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHO NEUNG-HO;CHOI YOUN-SOO;CHAE DONG-YUB;JUNG BAE-HYOUN;PARK YONG-KIL;KIM SUNG-WOOK |
分类号 |
G02F1/1368;G09F9/30 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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