发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor array panel which realizes a lower cost and a further shortening of process time by further reducing the number of necessary masks and the number of processes. SOLUTION: The method of manufacturing a thin film transistor array panel includes: forming thin film transistors each having a gate line, a data line and a drain electrode; forming an insulating layer on the thin film transistors; forming a first conductive layer electrically connected to the drain electrode on the insulating layer; forming a second conductive layer on the first conductive layer; forming a photoresist layer including two parts of different thickness on the second conductive layer; etching the second conductive layer with a first etchant by using the photoresist layer as a mask; and etching the first conductive layer with a second etchant by using the photoresist layer and the second conductive layer as a mask. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006201793(A) 申请公布日期 2006.08.03
申请号 JP20060013138 申请日期 2006.01.20
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHO NEUNG-HO;CHOI YOUN-SOO;CHAE DONG-YUB;JUNG BAE-HYOUN;PARK YONG-KIL;KIM SUNG-WOOK
分类号 G02F1/1368;G09F9/30 主分类号 G02F1/1368
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