发明名称 Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
摘要 A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.
申请公布号 US2006169582(A1) 申请公布日期 2006.08.03
申请号 US20050222231 申请日期 2005.09.07
申请人 APPLIED MATERIALS, INC. 发明人 BROWN KARL M.;PIPITONE JOHN;MEHTA VINEET
分类号 C23C14/00 主分类号 C23C14/00
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