发明名称 |
Semiconductor device having transistor with vertical gate electrode and method of fabricating the same |
摘要 |
A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.
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申请公布号 |
US2006170031(A1) |
申请公布日期 |
2006.08.03 |
申请号 |
US20060344560 |
申请日期 |
2006.01.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KANG SANG-WOO;HAN JEONG-UK;KIM YONG-TAE;YOON SEUNG-BEOM |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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