| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has solved the problems of a lifetime and the incidence of inferior products in an InGaN series semiconductor light emitting device. <P>SOLUTION: In the InGaN series semiconductor light emitting device having an Ag electrode 12, as the low dislocation semiconductor layer below 1×10<SP>7</SP>[1/cm<SP>2</SP>] or less of the dislocation density of the semiconductor layer 3 by the side of contact of the Ag electrode 12 at least, a short circuit is avoided as caused by the migration of the Ag generated along this dislocation. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
