| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of more easily manufacturing a semiconductor laser capable of oscillating a laser beam of short wavelength maintaining its high coherence at the same time with a high yield. SOLUTION: The group III nitride semiconductor laser is composed of an active layer 15 formed of the group III nitride semiconductor, a resonator which reflects light emitted from the active layer 15 with a pair of mirrors so as to induce laser oscillation, and a diffraction grating 24 which is formed of the group III nitride semiconductor grown at low temperatures of 600°C or below and selects light emitted from the active layer 15. The semiconductor laser which is capable of oscillating a laser beam of short wavelength with its high coherence simultaneously can be manufactured with a high yield through an easier method. COPYRIGHT: (C)2006,JPO&NCIPI
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