| 摘要 |
<PICT:1010308/C1/1> In the deposition, from the vapour phase by thermal decomposition, of a single crystal layer of doped silicon on a substrate which is a single crystal layer of doped silicon of different conductivity, the substrate plane is at an angle #q of 3/8 to 5 degrees with a 211-crystallographic plane. The substrate may have 1.2-19 x 105 exposed atomic steps per cm. of length. The deposited layer is substantially imperfection-free and has less than one interference line per 20 mm. of length. The silicon may be deposited from a vaporous mixture of silicochloroform and hydrogen at 1150-1200 DEG C. Specification 991,370 is referred to. |
