| 发明名称 |
PRODUCTION OF A TUNNEL OXIDE OF A NON-VOLATILE MEMORY TRANSISTOR USING FLOTOX TECHNOLOGY BY LOW-TEMPERATURE ION BEAM SPUTTERING |
| 摘要 |
The invention relates to a method for producing a microelectronic device provided with at least one floating grid component (230), comprising at least one step of forming, on a substrate, at least one dielectric layer (232) capable of serving as a tunnel dielectric for the floating grill, this step for forming the tunnel dielectric layer (232) having at least one low-temperature ion beam sputtering (IBS) step. |
| 申请公布号 |
WO2006079742(A1) |
申请公布日期 |
2006.08.03 |
| 申请号 |
WO2006FR50048 |
申请日期 |
2006.01.24 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;FERRANDIS, PHILIPPE;MOUREY, BRUNO;ANDRE, BERNARD |
发明人 |
FERRANDIS, PHILIPPE;MOUREY, BRUNO;ANDRE, BERNARD |
| 分类号 |
H01L21/28;H01L21/336;H01L21/441;H01L21/8247;H01L21/84 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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