Method of manufacturing a MOS field effect transistor with a recombination zone

摘要

Production of a MOSFET comprises structuring a starting material (3) with a trench oxide layer (1) and a thin active silicon layer (2); epitaxially depositing silicon (5) onto the structured starting material; counter doping a channel region; exposing partial regions (8) of the oxide layer; etching to remove silicon oxide; forming a gate oxide and a polysilicon gate (13); structuring the polysilicon; forming a source doping; forming a dielectric; structuring a metal; and forming gate and source contacts. Preferred Features: The starting material is wafer-bonded SOI material. The trench oxide layer is produced by implanting oxygen.