发明名称 |
Semiconductor device having triple LDD structure and lower gate resistance formed with a single implant process |
摘要 |
A method of fabricating a semiconductor device having a triple LDD (lateral diffused dopants) structure is disclosed. This fabrication method requires a single implant process, leading to reduction in fabrication costs and fabrication time. Moreover, this fabrication method increases the surface area of the gate structure of the semiconductor device that is available for silicide to be formed, leading to lower gate resistance.
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申请公布号 |
US7084458(B1) |
申请公布日期 |
2006.08.01 |
申请号 |
US20050120690 |
申请日期 |
2005.05.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KHAN IMRAN;WANG JIANSHI;HE YUE-SONG;KANG JUN |
分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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