PUMPING ELEMENT DRIVING SIGNAL GENERATING CIRCUIT AND METHOD IN SEMICONDUCTOR MEMORY DEVICE USING MRS SIGNAL,申请号KR20050006551-传众专利搜索

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发明名称	PUMPING ELEMENT DRIVING SIGNAL GENERATING CIRCUIT AND METHOD IN SEMICONDUCTOR MEMORY DEVICE USING MRS SIGNAL
摘要
申请公布号	KR20060085737(A)	申请公布日期	2006.07.28
申请号	KR20050006551	申请日期	2005.01.25
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	HWANG, SUNG MIN;KYUNG, KYE HYUN
分类号	G11C5/14;G11C7/20	主分类号	G11C5/14
代理机构		代理人
主权项
地址

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