| 摘要 |
A diode-end-pumped ~812 nm thulium doped solid state laser is disclosed, with improved efficiency and practicality. The inventive laser device include laser active media comprising a thulium doped dielectric solid state gain element, placed within a laser cavity, and diode-end-pumped with ~780 nm pump radiation. Solid state lasers emitting at a wavelengths of ~406 nm, ~270 nm, and ~203 nm are also disclosed, based on nonlinear wavelength conversion of a ~812 nm thulium:host solid state laser.
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