发明名称 |
Semiconductor fabrication process employing stress inducing source drain structures with graded impurity concentration |
摘要 |
A semiconductor fabrication process has recessed stress-inducing source/drain (SISD) structures that are formed using a multiple phase formation process. The SISD structures are semiconductor structures having a lattice constant that differs from a lattice constant of the semiconductor substrate in which the source/drain structures are recessed. The SISD structures preferably include semiconductor compound having a first element (e.g., silicon) and a second element (e.g., germanium or carbon). The SISD structure has a composition gradient wherein the percentage of the second element varies from the upper surface of the source/drain structure to a lower surface of the SISD structure. The SISD structure may include a first layer with a first composition of the semiconductor compound underlying a second layer with a second composition of the semiconductor compound. The second layer may include an impurity and have a higher percentage of the second element that the first layer.
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申请公布号 |
US2006166492(A1) |
申请公布日期 |
2006.07.27 |
申请号 |
US20050043577 |
申请日期 |
2005.01.26 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ORLOWSKI MARIUS K.;ADAMS VANCE H.;LIU CHUN-LI;STOKER MATTHEW W. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
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