| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a good quality silicon carbide (SiC) layer having a greatly reduced through-dislocation density on a silicon (Si) substrate, compared with that in the prior art. <P>SOLUTION: On the upside of a Si substrate having a plurality of pairs of mirror symmetric facets to the plane orientation of the substrate; a semiconductor buffer layer is formed which contains a part of Si and has a higher defect density than Si substrate, and an SiC layer is formed thereon in order to form a semiconductor device. Defects produced in the semiconductor buffer layer have each a vertical axis to the Si substrate, i.e., a pair of mirror symmetric to the plane orientation of the substrate, and opposite defects meet to disappear. The buffer layer has a property easy to cause the defect compared with the silicon carbide layer, and can involve the defect in the buffer layer. At a specified point, the defect is produced at a high possibility to accelerate the strain relaxation, and the progress of the defect is controlled to disappear it, thus forming a SiC layer having no strain and a low defect density. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
