发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus for enabling stable plasma discharge without performing coordination operation by a coordinator frequently. SOLUTION: The substrate treatment apparatus comprises a treatment chamber for storing substrates; a gas supplying means for supplying treatment gas into the treatment chamber; a pair of electrodes that generate plasma by applying high-frequency voltages and perform plasma the excitation of treatment gas supplied from the gas supplying means by the generated plasma; the coordinator that is connected between one of the pair of electrodes and a high-frequency power supply and performs impedance matching between one of the pair of electrodes and the high-frequency power supply; and a capacitor for connecting one and the other of the pair of electrodes. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006190876(A) 申请公布日期 2006.07.20
申请号 JP20050002399 申请日期 2005.01.07
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ISHIMARU NOBUO
分类号 H01L21/31;C23C16/509 主分类号 H01L21/31
代理机构 代理人
主权项
地址