发明名称 INFRARED SENSOR IC, INFRARED SENSOR AND METHOD FOR PRODUCING SAME
摘要 An extremely small infrared sensor IC is disclosed which is hardly affected by electromagnetic noises or thermal noises. Also disclosed are an infrared sensor and a method for producing the same. A small-sized infrared sensor IC in a simple package which can be operated at room temperature can be realized by hybridizing a compound semiconductor sensor unit (2) and an integrated circuit unit (3) in a same package. The compound semiconductor sensor unit (2) is composed of a compound semiconductor with low device resistance and high electron mobility, and the integrated circuit unit (3) performs an operation by processing electrical signals from the compound semiconductor sensor unit (2).
申请公布号 KR20060083206(A) 申请公布日期 2006.07.20
申请号 KR20067004857 申请日期 2006.03.09
申请人 ASAHI KASEI KABUSHIKI KAISHA 发明人 UENO KOICHIRO;KUZE NAOHIRO;MORIYASU YOSHITAKA;NAGASE KAZUHIRO
分类号 H01L31/0304;G01J1/02;G01J5/04;G01J5/20;H01L27/144;H01L31/0203;H01L31/0352;H01L31/103 主分类号 H01L31/0304
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