| 摘要 |
PROBLEM TO BE SOLVED: To provide a hetero junction semiconductor device in which film thickness is very thin, and a structure including a base region having higher carrier concentration has been achieved with the two-dimensional carrier gas layer which is different from that of the related art. SOLUTION: The hetero junction semiconductor comprises an emitter of the first conductivity type, a base of the second conductivity type, and three regions 21, 33, 24 of a collector of the first conductivity type. This semiconductor device has a structure that a through-hole 22c formed within a very small region is bored uniformly in the entire part of the flat surface of the base region 33 of the second conductivity type, a region showing the characteristics like that of a quantum structure is formed by filling the through-hole 22c with semiconductor having small band gap, and the two-dimensional electron gas or two-dimensional hole gas is formed in the region 22 like the quantum structure. COPYRIGHT: (C)2006,JPO&NCIPI |
