PRODUCTION METHOD AND PRODUCTION DEVICE FOR POLYCRYSTALLINE SEMICONDUCTOR THIN FILM

摘要

A production method and a production device for a polycrystalline semiconductor thin film capable of producing efficiently a polycrystalline semiconductor thin film having a uniform and long lateral growth distance. A production method for a polycrystalline semiconductor thin film having a laterally grown polycrystalline, comprising the step of irradiating the first irradiation area of a semiconductor thin film with a first laser beam having an energy quantity enough to melt and crystallize the semiconductor thin film over the entire thickness-direction area, and the step of irradiating a second irradiation area including the first irradiation area with a second laser beam having an energy quantity not enough to melt the semiconductor thin film. It is preferable that the optical axis of the first laser beam is in a vertical direction to the surface of the semiconductor thin film, and the optical axis of the second laser beam is in an oblique direction to the surface of the semiconductor thin film.