| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a system and a method for determining the maximum operating parameter used for a maskless application. <P>SOLUTION: The method and device for lithography used for patternizing an object. A radiated beam is supplied by an illuminating source 124, pattern for patternizing the radiated beam is formed by using pattern data with a pattern generator 104. A patternized beam is projected onto a targeted area on a substrate 114 supported by a stage 106 during an exposure operation with a projection system 108. Individual maximum operating parameters of the illuminating source 124, pattern generator 104 and/or stage 106 are determined by a control module. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
