| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus for suppressing the generation of plasma outside a buffer chamber. SOLUTION: The substrate treatment apparatus comprises a treatment chamber for storing a substrates; a gas supplying means for supplying treatment gas into the treatment chamber; a pair of electrodes that generate plasma by applying a high-frequency voltage and perform the plasma excitation of treatment gas supplied from the gas supplying means by the generated plasma; and a voltage application means for applying high-frequency voltages to the pair of electrodes so that the phase of a voltage at one of the pair of electrodes becomes opposite to that of the other electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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