Semiconductor device and method for manufacturing same

摘要

[Object] An object of the present invention is to mount both a RF circuit including an inductor formed therein and a digital circuit on a single chip. [Means for Solving Problems] MOSFETs are formed on a semiconductor substrate 1 in regions isolated by an element isolation film 2 . A plurality of low-permittivity insulator rods including a low-permittivity insulator embedded therein and penetrating a first interlevel dielectric film 4 to reach the internal of the silicon substrate are disposed in the RF circuit area 100 . An inductor 40 is formed on the interlevel dielectric film in the RF circuit area by using multi-layered interconnects. A high-permeability isolation region in which a composite material including a mixture of high-permeability material and a low-permittivity material is formed in the region of the core of the inductor and periphery thereof.