发明名称 FILM-FORMING APPARATUS AND FILM-FORMING METHOD
摘要 The present invention provides film formation systems and film formation methods. A high frequency (HF) electric power supply (11) applies a high frequency voltage to a cathode (5) which is provided, at its rear surface, with a permanent magnet (10), thereby to generate a reactive-mode plasma, and film formation by plasma polymerization is performed by the use of the generated reactive-mode plasma. The pressure of a plasma source gas in a vacuum chamber (1) is regulated, thereby to generate not a reactive-mode plasma but a metallic-mode plasma. The cathode (5) as a target is subjected to sputtering by the generated metallic-mode plasma, and film formation by magnetron sputtering is carried out.
申请公布号 EP1681367(A1) 申请公布日期 2006.07.19
申请号 EP20040734739 申请日期 2004.05.25
申请人 SHINMAYWA INDUSTRIES, LTD. 发明人 NOSE, KOICHI;SASAGAWA, KOICHI;FURUTSUKA, TAKESHI;TAKIGAWA, SHIRO;KOIZUMI, YASUHIRO
分类号 C23C14/00;C23C14/34;C23C14/35;C23C14/54;(IPC1-7):C23C14/12;F21S8/10;F21V7/22 主分类号 C23C14/00
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