发明名称 |
FILM-FORMING APPARATUS AND FILM-FORMING METHOD |
摘要 |
The present invention provides film formation systems and film formation methods. A high frequency (HF) electric power supply (11) applies a high frequency voltage to a cathode (5) which is provided, at its rear surface, with a permanent magnet (10), thereby to generate a reactive-mode plasma, and film formation by plasma polymerization is performed by the use of the generated reactive-mode plasma. The pressure of a plasma source gas in a vacuum chamber (1) is regulated, thereby to generate not a reactive-mode plasma but a metallic-mode plasma. The cathode (5) as a target is subjected to sputtering by the generated metallic-mode plasma, and film formation by magnetron sputtering is carried out.
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申请公布号 |
EP1681367(A1) |
申请公布日期 |
2006.07.19 |
申请号 |
EP20040734739 |
申请日期 |
2004.05.25 |
申请人 |
SHINMAYWA INDUSTRIES, LTD. |
发明人 |
NOSE, KOICHI;SASAGAWA, KOICHI;FURUTSUKA, TAKESHI;TAKIGAWA, SHIRO;KOIZUMI, YASUHIRO |
分类号 |
C23C14/00;C23C14/34;C23C14/35;C23C14/54;(IPC1-7):C23C14/12;F21S8/10;F21V7/22 |
主分类号 |
C23C14/00 |
代理机构 |
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主权项 |
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