| 摘要 |
According to one embodiment, a method ( 100 ) may include forming a first insulating layer over a semiconductor substrate (step 102 ), forming a hard mask layer (step 104 ), and forming a photoresist etch mask having a thickness of less than about 4,000 angstroms (step 106 ). Such a reduced thickness may conventionally lead to uncontrolled etching and/or may require multiple steps to ensure feature formation. A method ( 100 ) may further include etching an opening through at least one half the thickness of the hard mask layer to form a hard mask (step 108 ) and etching through a first insulating layer without first removing a photoresist layer (step 110 ). Such etching can essentially consume a photoresist layer, however controllability can be maintained as etching may continue with a hard mask in place.
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