发明名称 |
PHOTOELEKTRONISCHES MATERIAL, DIESES VERWENDENDE VORRICHTUNGEN UND HERSTELLUNGSVERFAHREN |
摘要 |
<p>This invention relates an optoelectronic material comprising a uniform medium with a controllable electric characteristic; and semiconductor ultrafine particles dispersed in the medium and having a mean particle size of 100 nm or less, and an application device using the same. This invention also relates to a method of manufacturing an optoelectronic material by irradiating a laser beam onto a first target of a semiconductor material, placed in a reaction chamber in low pressure rare gas ambient, and a second target of a medium material with a controllable electric characteristic, placed in the reaction chamber, condensing/growing a semiconductor material ablated from the first target to be collected as ultrafine particles having a mean particle size of 100 nm or smaller on a substrate placed in the reaction chamber, and condensing/growing a medium material ablated from the second target to be collected on the substrate placed in the reaction chamber, thus forming an ultrafine-particles dispersed layer having semiconductor ultrafine particles dispersed in the medium on the substrate. <IMAGE></p> |
申请公布号 |
AT332572(T) |
申请公布日期 |
2006.07.15 |
申请号 |
AT19970922160T |
申请日期 |
1997.05.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMADA, YUKA;YOSHIDA, TAKEHITO;TAKEYAMA, SHIGERU;MATSUDA, YUJI;MUTOH, KATSUHIKO |
分类号 |
H01L21/203;B01D53/78;H01L31/18;H01L33/00;H01L33/18;H01L33/26;(IPC1-7):H01L21/203;H05B33/00;H01L31/08;H01L31/035 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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