| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for improving the performance of a semiconductor device. SOLUTION: Lower, intermediate and upper films 8, 9, 10 are formed in this order on a semiconductor substrate 1 to cover a gate structure 20 and offset spacers 5a, 5b. The lower and upper films 8, 10 are silicon oxide films formed by decomposing TEOS, using the LPCVD method. The lower, intermediate and upper films 8, 9, 10 are partly removed to expose the semiconductor substrate 1, and side wall spacers are formed through the offset spacer 5a on the side face of the gate structure 20, including the lower, intermediate and upper films 8, 9, 10. COPYRIGHT: (C)2006,JPO&NCIPI
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