| 摘要 |
PROBLEM TO BE SOLVED: To realize high mobility and frequency characteristics by smoothening charge transfer in an organic TFT element. SOLUTION: A thin film field effect transistor is provided with a gate electrode 11 on a substrate 10, a gate insulating film 12 on at least a part of the gate electrode, organic electronic materials 17, 13 which are formed to become at least a part thereof on the gate insulating film and in which current controlled by the potential created by the gate electrode flows, a source electrode 15 that allows current to flow in the organic electronic materials, and a drain electrode 14 that allows current to flow in the organic electronic materials. At least either of the source electrode or drain electrode is disposed on the organic electronic material of film 17 thinner than that of the organic electronic material between the drain electrode and the source electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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