Cantilevered type Film Bulk Acoustic Resonator fabrication method and Resonator fabricated by the same

摘要

A bottom electrode (120) is formed directly on a sacrificial layer (160) and on exposed dielectric layer (110) on the substrate (100). A top electrode (140) is formed on the piezoelectric layer (120) on the bottom electrode. The sacrificial layer is removed after top electrode formation to form air gap (170). Another dielectric layer is formed on the top electrode. An independent claim is also included for film bulk acoustic resonator.