发明名称 |
Method for manufacturing a semiconductor thin film |
摘要 |
A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
|
申请公布号 |
US2006148218(A1) |
申请公布日期 |
2006.07.06 |
申请号 |
US20060322653 |
申请日期 |
2006.01.03 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI;MIYANAGA AKIHARU;TERAMOTO SATOSHI |
分类号 |
H01L21/36;H01L21/20;H01L21/336 |
主分类号 |
H01L21/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|