发明名称 Planar gated field emission devices
摘要 In a field emitter ( 100 ) including a substrate ( 110 ), the substrate ( 110 ) has a substantially non-conductive top substrate surface ( 112 ). A conductive cathode member ( 130 ) is disposed on the top substrate surface ( 112 ) and has a top cathode surface ( 132 ). A conductive gate member ( 120 ) is disposed on the top substrate surface ( 112 ) and is substantially coplanar with the cathode member ( 130 ). An emitter structure ( 140 ) extends away from the top cathode surface ( 132 ). The gate member ( 120 ) is spaced apart from the cathode member ( 130 ) at a distance so that when a predetermined potential is applied between the cathode member ( 130 ) and gate member ( 120 ), the emitter structure ( 140 ) will emit electrons.
申请公布号 US2006145582(A1) 申请公布日期 2006.07.06
申请号 US20050029707 申请日期 2005.01.05
申请人 GENERAL ELECTRIC COMPANY 发明人 HUBER WILLIAM H.
分类号 H01J1/14;H01J1/02;H01J1/05;H01J9/04 主分类号 H01J1/14
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