| 摘要 |
A semiconductor device with a metal line and a method of forming the same. The method includes forming an insulation layer on a semiconductor substrate including a predetermined lower structure, forming a vertical hole and a horizontal hole by etching the insulation layer, forming a supporting part by filling the vertical holes and horizontal holes with a nitride layer, and forming a damascene metal line layer by forming a metal line on the insulation layer. The method also includes performing the forming process for the damascene metal line layer a plurality of times, removing the insulation layer, and forming a protective layer on the highest layer of the damascene metal line layer.
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