| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a metal polishing solution with a high metal polishing rate and high productivity which is suitable for a semiconductor device and apparatus which are excellent in fining, thin film processing, dimensional accuracy, electrical characteristics and reliability, and a polishing method using it. <P>SOLUTION: The metal polishing solution comprises an abrasive grain and its characteristic after defrosting is not practically different than before freezing. In the polishing method, a polishing film is polished by relatively moving a polishing board and a substrate by pressing the substrate having the polishing film to a polishing cloth while supplying the metal polishing solution on the polishing cloth of the polishing board. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
