发明名称 Method for detecting and monitoring wafer probing process instability
摘要 A system and method for detecting and monitoring wafer probe stability including the steps of, probing each die on a wafer, and for each die determining whether the result of the probe is a pass or a fail. If the result of a probe is a fail, re-probing the die and determining whether the re-probe is a pass or a fail. Once all the dies have been probed determining the rate of die re-probes that lead to passes, comparing the rate of passes on re-probes to a pre-determined limit, and if the rate of passes on re-probes is greater than the predetermined limit, assigning the probe status as unstable.
申请公布号 US2006149505(A1) 申请公布日期 2006.07.06
申请号 US20050542873 申请日期 2005.07.20
申请人 SYSTEMS ON SILICON MANUFACTURING CO. PTE LTD. 发明人 TAN BEN G.
分类号 G06F11/30;G01R1/067 主分类号 G06F11/30
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