发明名称 |
Device with stepped source/drain region profile |
摘要 |
Embodiments of the invention provide a transistor with stepped source and drain regions. The stepped regions may provide significant strain in a channel region while minimizing current leakage. The stepped regions may be formed by forming two recesses in a substrate to result in a stepped recess, and forming the source/drain regions in the recesses.
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申请公布号 |
US2006145273(A1) |
申请公布日期 |
2006.07.06 |
申请号 |
US20050031843 |
申请日期 |
2005.01.06 |
申请人 |
CURELLO GIUSEPPE;SELL BERNHARD;TYAGI SUNIT;AUTH CHRIS |
发明人 |
CURELLO GIUSEPPE;SELL BERNHARD;TYAGI SUNIT;AUTH CHRIS |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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