SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR PACKAGE

摘要

PROBLEM TO BE SOLVED: To make shallow a concave portion formed in the surface of a bump of a semiconductor device. SOLUTION: The method of manufacturing the semiconductor device comprises processes of: forming a first insulating film 11 above a semiconductor substrate 1; forming a pad 12b on the first insulating film 11; forming a second insulating film 13 on the first insulating film 11 and on the pad 12b; forming a third insulating film 14 on the second insulating film 13; forming a first opening 14a located above the pad 12b in the third insulating film 14; forming a second opening 13a located on the pad 12b and smaller than the first opening 14a, in the second insulating film 13; and forming the bump 16 located inside the first opening 14a, in the second opening 13a and on the second insulating film 13. COPYRIGHT: (C)2006,JPO&NCIPI