In accordance with one embodiment of the invention, a memory device may include a memory layer and a MEMS layer. The memory layer may include an integrated circuit with a multiplexer and optionally a memory controller and a storage medium disposed on the integrated circuit where the storage medium includes chalcogenide islands as storage elements. The MEMS layer may include a movable MEMS platform having probes to connect selected chalcogenide islands via positioning of the MEMS platform. A high voltage source disposed external to the memory layer and the MEMS layer may provide a high voltage to a stator electrode on the memory layer and to a rotor electrode on the MEMS platform to control movement of the MEMS platform with respect to the storage medium. The memory device may be utilized in portable electronic devices such as media players and cellular telephones to provide a nonvolatile storage of information.
