SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFER, AND PROCESS FOR PRODUCING THE SAME

摘要

This invention provides a large-diameter SiC single crystal having high resistivity and possessing high quality, an SiC single crystal wafer and a process for producing the same. The silicon carbide single crystal contains uncompensated impurities at an atom density of not less than 1 × 10¹⁵/cm³ and contains vanadium in a concentration below the uncompensated impurity concentration. The silicon carbide single crystal wafer is produced by processing and polishing the silicon carbide single crystal and has an electrical resistivity of not less than 5 × 10³ Ocm at room temperature.