发明名称 |
Field effect transistor with etched-back gate dielectric |
摘要 |
A method for making an ultrathin high-k gate dielectric for use in a field effect transistor is provided. The method involves depositing a high-k gate dielectric material on a substrate and forming an ultrathin high-k dielectric by performing a thinning process on the high-k gate dielectric material. The process used to thin the high-k dielectric material can include at least one of any number of processes including wet etching, dry etching (including gas cluster ion beam (GCIB) processing), and hybrid damage/wet etching. In addition to the above, the present invention relates to an ultrathin high-k gate dielectric made for use in a field-effect transistor made by the above method.
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申请公布号 |
US7071122(B2) |
申请公布日期 |
2006.07.04 |
申请号 |
US20030730892 |
申请日期 |
2003.12.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SAENGER KATHERINE L.;JAMMY RAJARAO;NARAYANAN VIJAY |
分类号 |
H01L21/31;H01L21/28;H01L21/283;H01L21/311;H01L21/314;H01L21/336;H01L21/8238;H01L29/51;H01L29/94 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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