| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing process of a magnetoresistive effect element in which an upper layer of a barrier layer can inherits a crystal structure of a lower layer. SOLUTION: At first, a pinned layer 55 is formed. A metal layer 53a becoming the precursor of an oxide barrier layer 53 is then formed on the pinned layer, and a free layer 57 is formed thereon. Subsequently, the free layer, the metal layer and the pinned layer are patterned into a desired element profile by etching, e.g. milling. Thereafter, the patterned element is heated in oxygen atmosphere and oxygen is diffused from the sidewall of the metal layer. Consequently, the metal layer as the precursor is oxidized and an oxide barrier layer is formed. COPYRIGHT: (C)2006,JPO&NCIPI
|
