| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor-phase epitaxy device by which deterioration in film quality due to particles, variations in film thickness due to fall in temperature of a substrate and the like is suppressed and a high-quality thin film can be formed by preventing decomposition or reaction of source gas and cooling of the susbstrate, a susceptor or the like by low-temperature source gas and supplying the source gas to the surface of the substrate under most suitable temperature conditions. SOLUTION: A flow channel 15 which is situated upstream of a susceptor 11 in the direction of the source gas is provided with a first temperature control region 21 which controls the temperature of the source gas introduced from a source gas supply section 14 into the flow channel 15 at its thermal decomposition temperature or less. A second temperature control region 22 which controls the source gas at a temperature higher than that controlled by the first temperature control region 21 or lower than the heating temperature of the substrate is arranged between the first temperature control region 21 and the susceptor. COPYRIGHT: (C)2006,JPO&NCIPI
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