Method for forming landing plug contact in semiconductor device

摘要

A method for forming a landing contact plug in a semiconductor device is provided. The method includes the steps of: forming a plurality of gate structures on a substrate, each gate structure including a gate hard mask; forming an inter-layer insulation layer over the gate structures; planarizing the inter-layer insulation layer until the gate hard mask is exposed; forming an etch barrier layer on the inter-layer insulation layer; etching a predetermined portion of the inter-layer insulation layer by using the etch barrier layer as an etch barrier to form a plurality of contact holes; forming a conductive layer until the conductive layer fills the contact holes; removing surface roughness created during the formation of the conductive layer by a first etch-back process; and planarizing the conductive layer by a second etch-back process until the gate hard mask is exposed.